S. V. Savinov, A. I. Oreshkin, S. I. Oreshkin, “Ab initio electronic structure of Ge(111)-(2<nobr>$\times$</nobr>1) surface in the presence of surface vacancy. Apllication to STM data analysis”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2012, Volume 96, Issue 1,Pages <nobr>33

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Ab initio electronic structure of Ge(111)-(2$\times$1) surface in the presence of surface vacancy. Apllication to STM data analysis

S. V. Savinov^a, A. I. Oreshkin^a, S. I. Oreshkin^b

^a M. V. Lomonosov Moscow State University, Faculty of Physics
^b P. K. Sternberg Astronomical Institute, M. V. Lomonosov Moscow State University

Abstract: We present the results of first principles modeling of Ge(111)-(2${\times}$1) surface in the presence of atomic vacancy in surface bi-layer. We showed that simple crystal structure defect affects surface electronic structure to the extent comparable with the influence of doping atom. We demonstrated the strong difference of surface LDOS structure above surface defects of different kind. We have proved that spatial oscillations of LDOS exist around individual surface vacancy in the same tunneling bias range as in case of donor doping atom on Ge(111)-(2${\times}$1) surface.

Received: 26.05.2012

Language: English