This article is cited in 39 papers

CONDENSED MATTER

Nanotube devices: A microscopic model

K. A. Bulashevich^ab, V. V. Rotkin<sup>cb

a</sup> Saint-Petersburg State Technical University
^b Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
^c Beckman Institute, UIUC

Abstract: A microscopic model is developed for calculating electrostatic properties of nanotube devices. It is shown that the quantum-mechanical approach yields the same results as the statistical calculation in the limit of a thin tube suspended over a conducting gate at a distance exceeding the nanotube radius. A closed analytic expression is obtained for the atomistic capacitance of a straight nanotube and for a nanotube with a modest curvature. This method allows the fast and exact calculation of device parameters for the nanotube electromechanical systems and nanotube electronic devices.

PACS: 61.46.+w, 85.42.+m, 85.65.+h

Received: 21.01.2002

 English version: Journal of Experimental and Theoretical Physics Letters, 2002, 75:4, 205–209

Bibliographic databases:

•