V. V. Bakin, A. A. Pakhnevich, S. N. Kosolobov, G. È. Shaibler, A. S. Yaroshevich, A. S. Terekhov, “Refraction of thermalized electrons emitted ballistically into vacuum from <nobr>$p^+$</nobr>-GaAs-(Cs,O)”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2003, Volume 77, Issue 4,Pages <nobr>197

This article is cited in 10 papers

CONDENSED MATTER

Refraction of thermalized electrons emitted ballistically into vacuum from $p^+$-GaAs-(Cs,O)

V. V. Bakin^a, A. A. Pakhnevich^a, S. N. Kosolobov^b, G. È. Shaibler^b, A. S. Yaroshevich^b, A. S. Terekhov^ab

^a Novosibirsk State University
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The refraction of thermalized photoelectrons emitted into vacuum from $p^+$-GaAs-(Cs,O) with a negative electron affinity was observed. The refraction is caused by a jump in electron effective mass at the semiconductor-vacuum interface. It was observed only for a small group of electrons that were emitted ballistically into vacuum without scattering of the tangential momentum component at the interface.

PACS: 67.57.Lm, 76.60.-k

Received: 21.01.2003