K. V. Toropetskiy, O. E. Tereshchenko, A. S. Terekhov, “Energy threshold of Cs-induced chemisorption of oxygen on a GaAs(Cs, O) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2008, Volume 88, Issue 8,Pages <nobr>597

This article is cited in 5 papers

CONDENSED MATTER

Energy threshold of Cs-induced chemisorption of oxygen on a GaAs(Cs, O) surface

K. V. Toropetskiy^ab, O. E. Tereshchenko^ab, A. S. Terekhov^ba

^a Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia
^b Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russia

Abstract: The probability of Cs-induced chemisorption of oxygen on a p-GaAs(Cs, O) surface is experimentally shown to be close to unity only when the work function does not exceed ~3.1 ± 0.1 eV. The measured adsorption energy threshold likely corresponds to the energy of the unoccupied level of the antibonding 2π* orbital of the O₂ molecule in the preadsorption state on the semiconductor surface.

PACS: 29.30.Dn, 33.15.Fm, 65.40.Gh, 68.43.Mn, 68.47.Fg, 81.05.Ea

Received: 20.08.2008