G. V. Benemanskaya, V. S. Vikhnin, S. N. Timoshnev, “Self-organization of nanostructures on the <i>n</i> -GaN(0001) surface in the Cs and Ba adsorption”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2008, Volume 87, Issue 2,Pages <nobr>119

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CONDENSED MATTER

Self-organization of nanostructures on the n -GaN(0001) surface in the Cs and Ba adsorption

G. V. Benemanskaya, V. S. Vikhnin, S. N. Timoshnev

Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

Abstract: A regular self-organized 2D nanostructure of a new type of nanocombs has been created in situ in an ultrahigh vacuum on the n-GaN(0001) surface. The nanostructure is formed as a result of multilayer adsorptions of Cs and Ba. The structure is highly regular in the microrange, arranged in the form of combs 60–70 nm in diameter with a wall height of about 7 nm. It has been revealed that the nanostructure has a quasi-metallic conduction, a low work function of about 1.4 eV, and a high quantum yield of photoemission under light excitation in the GaN transparency region. A self-organization model is proposed, which implies the formation of a surface 2D longperiod incommensurate phase interacting with the superstructure of the Cs⁺ and Ba²⁺ ion clusters with allowance for the polaron compensation on the GaN surface.

PACS: 61.68.+n, 73.20.-r, 79.60.-i

Received: 22.11.2007
Revised: 03.12.2007