V. Ya. Aleshkin, L. V. Gavrilenko, D. M. Gaponova, Z. F. Krasil'nik, D. I. Kryzhkov, D. I. Kuritsyn, S. M. Sergeev, V. G. Lyssenko, “Near-field mechanism of photoluminescence excitation in quantum well heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2011, Volume 94, Issue 11,Pages <nobr>890

This article is cited in 2 papers

CONDENSED MATTER

Near-field mechanism of photoluminescence excitation in quantum well heterostructures

V. Ya. Aleshkin^a, L. V. Gavrilenko^a, D. M. Gaponova^a, Z. F. Krasil'nik^a, D. I. Kryzhkov^a, D. I. Kuritsyn^a, S. M. Sergeev^a, V. G. Lyssenko^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences

Abstract: We report a study into the process of energy transfer between quantum wells divided by $30$-nm-thick opaque barriers. It was experimentally observed that the intensity of a photoluminescence signal from a quantum well increased by $15\%$ under resonant excitation of exciton transition in the adjacent quantum well. The quantum wells were $30$ nm apart. A radiative mechanism of energy transfer in the near-field region of emitting exciton is proposed. Within this theoretical model, the efficiency of the energy transfer decreases by a power law with greater distance between the quantum wells. The theory is found to be in qualitative agreement with the experimental results.

Received: 31.10.2011