This article is cited in 5 papers

CONDENSED MATTER

Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy

A. V. Dvurechenskii, Zh. V. Smagina, V. A. Zinov'ev, V. A. Armbrister, V. A. Volodin, M. D. Efremov

Institute of Semiconductor Physics of SB RAS, Novosibirsk

Abstract: Multilayer silicon structures with built-in layers of Ge nanoclusters were studied experimentally by Raman light scattering. The built-in layers were formed by the pulsed action of a low-energy beam of intrinsic ions during molecular-beam epitaxy. It is found that the ion-stimulated nucleation and the subsequent growth make it possible to obtain Ge nanoclusters almost free of Si.

PACS: 61.14.Hg, 61.80.-x, 68.55.-a

Received: 24.02.2004

 English version: Journal of Experimental and Theoretical Physics Letters, 2004, 79:7, 333–336

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