L. A. Balagurov, S. O. Klimonsky, S. P. Kobeleva, A. F. Orlov, N. S. Perov, D. G. Yarkin, “On the origin of ferromagnetism in semiconducting TiO<sub>2−δ</sub>:Co oxide”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2004, Volume 79, Issue 2,Pages <nobr>111

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CONDENSED MATTER

On the origin of ferromagnetism in semiconducting TiO_2−δ:Co oxide

L. A. Balagurov^a, S. O. Klimonsky^a, S. P. Kobeleva^a, A. F. Orlov^a, N. S. Perov^b, D. G. Yarkin^a

^a JSC "Giredmet" SRC RF, the Federal State Research and Design Institute of Rare Metal Industry
^b M. V. Lomonosov Moscow State University

Abstract: In Co-doped TiO_2−δ oxide films deposited on SrTiO₃(100) substrates, a room-temperature ferromagnetism is found to occur only in a limited charge-carrier concentration interval from 2×10¹⁸− 5×10²² cm⁻³. This indirectly testifies that ferromagnetism in the aforementioned n-type semiconductor is associated with the exchange interaction of magnetic ions via conduction electrons rather than with the formation of Co clusters in the material. The magnetic moment per Co atom is 0.8μ_B in the TiO cubic phase and 0.5μ_B in the anatase tetragonal phase of TiO₂.

PACS: 75.30.Hx, 75.50.Pp, 75.60.Ej, 75.70.Ak

Received: 11.12.2003