E. M. Dizhur, A. N. Voronovskii, A. V. Fedorov, I. N. Kotel’nikov, S. E. Dizhur, “Transition of the near-surface $\delta$ layer in an Al/$\delta$(Si)–GaAs tunnel structure to the insulating state under pressure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2004, Volume 80, Issue 6,Pages 489

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Transition of the near-surface $\delta$ layer in an Al/$\delta$(Si)–GaAs tunnel structure to the insulating state under pressure

E. M. Dizhur^a, A. N. Voronovskii^a, A. V. Fedorov^a, I. N. Kotel’nikov^b, S. E. Dizhur^b

^a Institute for High Pressure Physics, Russian Academy of Sciences
^b Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences

Abstract: The tunnel and lateral conductivities of an Al/GaAs tunnel structure with a surface Si $\delta$-doped layer are measured at liquid-helium temperatures under a hydrostatic pressure of up to 3 GPa. Transition of the $\delta$ layer to the insulating state at a pressure of about 2 GPa is revealed. During this transition, the tunnel resistance increases steadily (on a logarithmic scale) and the zero-bias anomaly in the tunnel resistance exhibits a sharp peak. These results are interpreted in terms of representations of the effect of pressure on the energy-band structure and behavior of DX levels.

PACS: 62.50.+p, 73.21.-b, 73.30.$+$y, 73.40.Gk

Received: 12.08.2004