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SCIENTIFIC SUMMARIES

Problem of impurity states in narrow-gap lead telluride-based semiconductors

L. I. Ryabova, D. R. Khokhlov

M. V. Lomonosov Moscow State University

Abstract: A review of recent results of experimental investigations devoted to studying unusual properties of impurity states in doped narrow-gap lead telluride-based semiconductors is presented. These results are analyzed in the framework of existing theoretical concepts.

PACS: 71.23.An, 71.55.-i

Received: 09.06.2004

 English version: Journal of Experimental and Theoretical Physics Letters, 2004, 80:2, 133–139

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