V. A. Volodin, A. S. Kacko, A. G. Cherkov, A. V. Latyshev, J. Koch, B. N. Chichkov, “Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2011, Volume 93, Issue 10,Pages <nobr>665

This article is cited in 12 papers

CONDENSED MATTER

Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

V. A. Volodin^a, A. S. Kacko^a, A. G. Cherkov^a, A. V. Latyshev^ba, J. Koch^c, B. N. Chichkov^c

^a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
^b Novosibirsk State University
^c Laser Zentrum Hannover

Abstract: Femtosecond laser treatments (second harmonic of Ti-sapphire laser, $\lambda\approx400$ nm wavelength, $<30$ fs pulse duration) were applied for crystallization of thin hydrogenated amorphous silicon films on glass substrates. The concentration of atomic hydrogen in the films was varied from $10$ to $\approx35\%$. The energy densities (laser fluences) for crystallization of the films with thicknesses from $20$ to $130$ nm were found. Assumedly, non-thermal processes (plasma annealing) take place in phase transition caused ultra-fast pulses. The developed approach can be used for creation of polycrystalline silicon films on non-refractory substrates.

Received: 15.03.2011
Revised: 11.04.2011

Language: English