V. Ya. Aleshkin, A. V. Antonov, V. I. Gavrilenko, B. N. Zvonkov, D. V. Kozlov, “Impurity photoconductivity in strained <i>p</i> -InGaAs/GaAsP heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2008, Volume 88, Issue 3,Pages <nobr>229

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CONDENSED MATTER

Impurity photoconductivity in strained p -InGaAs/GaAsP heterostructures

V. Ya. Aleshkin, A. V. Antonov, V. I. Gavrilenko, B. N. Zvonkov, D. V. Kozlov

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

Abstract: The impurity-photoconductivity spectrum is observed for strained quantum wells of the p-InGaAs/GaAs solid solution at T= 4.2 K. In addition to the broad photoconductivity band attributed to the transitions from the acceptor ground state to the continuum of the first size-quantization subband, the spectrum exhibits a peak due to the transitions from the ground state to the excited localized acceptor state, a band corresponding to the transitions to the resonance states associated with the second heavy-hole size-quantization subband, and a narrow photoconductivity peak (Fano resonance) in the spectral range corresponding to the optical-phonon energy.

PACS: 71.23.An, 71.55.-i, 71.70.Fk

Received: 03.07.2008