CONDENSED MATTER

Surfactant properties of cesium in molecular beam epitaxy of GaAs(100)

O. E. Tereshchenko^ab, D. V. Dmitriev^ab, A. I. Toropov^ab, S. V. Eremeev^cd, S. E. Kul'kova<sup>cd

a</sup> Novosibirsk State University
^b A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
^c Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences
^d Tomsk State University V.V.Kuibyshev

Abstract: experimental and ab initio investigations of the effect of a decrease in the binding energy of surface arsenic atoms under the cesium adsorption on an As-stabilized GaAs(001)-(2$\times$4) surface have been performed. The cesium-induced redistribution of the charge on the surface atoms reduces the electron density in the As-Ga bond of the upper layer of the GaAs(001) surface; thus, the As-Ga binding energy decreases and, as a result, the diffusion activation energy, as well as the arsenic atom desorption, decreases. An increase in the diffusion coefficient of surface atoms, along with the property of Cs to segregate on the surface of a growing semiconductor film, makes it possible to use cesium as a surfactant in the low-temperature growth of GaAs by molecular beam epitaxy.

Received: 05.04.2011

 English version: Journal of Experimental and Theoretical Physics Letters, 2011, 93:10, 585–590

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