This article is cited in 1 paper

ATOMS, SPECTRA, RADIATIONS

Tunneling of X-ray photons through a thin film under total internal reflection conditions

A. G. Tur'yanskii, I. V. Pirshin

P. N. Lebedev Physical Institute, Russian Academy of Sciences

Abstract: Tunneling of 0.154-and 0.139-nm x-ray photons through a thin film under total internal reflection conditions has been experimentally demonstrated. The NiSi₂ film 13 nm thick is deposited by magnetron sputtering on a polished Si substrate. A beam with an angular spread of 20″ is directed to the Si/NiSi₂ interface from the inside through the lateral surface of a sample. A peak associated with tunneling of photons from Si to air through the NiSi₂ film is observed at grazing angles of θ₁ > 0.4θ_c, where θ_c is the critical angle of total internal reflection at the Si/NiSi₂ interface. The integral intensity of tunneling peaks that is measured for various θ₁ angles agrees with the calculations.

PACS: 07.60.Hv, 07.85.Fv, 41.50.+h

Received: 22.04.2005

 English version: Journal of Experimental and Theoretical Physics Letters, 2005, 81:10, 491–493

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