This article is cited in 4 papers

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Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix

D. D. Ri^a, V. G. Mansurov^a, A. Yu. Nikitin^a, A. K. Gutakovskii^a, K. S. Zhuravlev^a, P. Tronc<sup>b

a</sup> A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
^b Laboratoire d'Optique Physique, Ecole Superieure de Physique et Chimie Industrielles, 75005 Paris, France

Abstract: The photoluminescence (PL) of GaN quantum dots in an AlN matrix is studied. It is found that the maximum of the PL line does not shift when the laser excitation power varies. The transient PL spectra indicate that the quenching kinetics is nonexponential and the quenching law depends on the spectral range. The experimental data are explained in the framework of a model taking into account the strong built-in electric field in wurtzite structures and the transport of charge carriers between them.

PACS: 78.55.Cr, 78.67.Hc

Received: 07.12.2004

 English version: Journal of Experimental and Theoretical Physics Letters, 2005, 81:2, 62–65

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