This article is cited in 4 papers

CONDENSED MATTER

Transverse charge-carrier transfer in selectively doped GaAs/AlGaAs semiconductor heterostructures with longitudinal current flow

E. I. Lonskaya^a, O. A. Ryabushkin<sup>ab

a</sup> Institute of Radioengineering and Electronics of Russian Academy of Sciences, Fryazino Department
^b Moscow Institute of Physics and Technology

Abstract: Photoreflectance spectra of selectively doped GaAs/AlGaAs heterostructures are studied under the conditions of direct current flow along the structure layers. Using a model developed for the spectra, variations of the internal transverse electric fields are calculated for longitudinal current flow. It is proved experimentally that even a weak heating of electrons in such structures leads to a spatial redistribution of electrons in the direction transverse to the heterostructure layers.

PACS: \vspace*{-3mm}73.40.Kp, 78.40.Fy, 78.66.Fd

Received: 17.10.2005

 English version: Journal of Experimental and Theoretical Physics Letters, 2005, 82:10, 664–668

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