Abstract:
A qualitative analysis of spin-dependent tunneling in ferromagnetic metal–insulator–ferromagnetic metal junctions is performed using the WKB approximation and a parabolic band model. It is shown that, as distinct from other tunneling characteristics, only electrons moving at large angles in the plane of the tunnel barrier contribute to the magnetoresistance. The cause of the rapid decrease in the junction magnetoresistance upon applying a bias voltage across the junction is ascertained. It is shown that this cause is attributed to the mirror character of tunneling and remains valid within the framework of more complicated models.
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