I. V. Sabinina, A. K. Gutakovskii, Yu. G. Sidorov, M. V. Yakushev, V. S. Varavin, A. V. Latyshev, “Observation of antiphase domains in CdxHg1−xTe films on silicon by the phase contrast method in atomic force microscopy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2005, Volume 82, Issue 5,Pages 326

This article is cited in 4 papers

CONDENSED MATTER

Observation of antiphase domains in Cd_xHg_1−xTe films on silicon by the phase contrast method in atomic force microscopy

I. V. Sabinina^a, A. K. Gutakovskii^a, Yu. G. Sidorov^a, M. V. Yakushev^a, V. S. Varavin^a, A. V. Latyshev^ba

^a Institute of Semiconductor Physics of Siberian Branch RAS
^b Novosibirsk State University

Abstract: It has been shown that phase contrast in atomic force microscopy (AFM) can be used to obtain adequate information on the density and distribution of antiphase domains on the surface of CdHgTe films grown by molecular beam epitaxy on a Si(301) substrate. By comparing the AFM phase images of the film surface with TEM images of structural defects in the near-surface region, the relation between microstructure and micromorphology of the films is revealed.

PACS: 68.37.-d, 68.47.Fg, 68.55.-a

Received: 11.07.2005