Abstract:
Expressions for resonance active high-frequency small-signal conductivity and resonance level widths have been derived for asymmetric triple-barrier resonance-tunneling structures with thin high barriers. It is found that if the levels forming a common resonance level have different parities in each of double-barrier structures, the width of the common level and, accordingly, the total conductance of the entire structure may increase manifold for a certain choice of the triple-barrier structure parameters. Consequently, the lifetime of electrons on this level also decreases drastically; hence, the conditions of coherent transport (departure of electrons from the structure without their collision with phonons) can be easily realized.
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