This article is cited in 12 papers

CONDENSED MATTER

Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum

V. A. Volodin, M. D. Efremov

Institute of Semiconductor Physics of Siberian Branch of RAS

Abstract: Raman spectroscopy is employed for studying silicon nanocrystal arrays in boron-doped amorphous silicon films. The nanocrystals were formed in the initial amorphous films by the pulsed impact of an excimer laser. The electron-phonon interaction effects are observed experimentally in the heterostructure formed by a silicon nanocrystal and an amorphous matrix. These effects can be described in the framework of the familiar Fano interference model.

PACS: 61.46.+w, 63.20.Kr, 63.22.+m, 78.30.-j

Received: 14.06.2005

 English version: Journal of Experimental and Theoretical Physics Letters, 2005, 82:2, 86–88

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