B. V. Andryushechkin, K. N. El'tsov, V. V. Cherkez, “Epitaxial growth of semiconductor thin films on metals in the halogenation process. Atomic structure of copper iodide on the Cu(110) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2006, Volume 83, Issue 4,Pages <nobr>195

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Epitaxial growth of semiconductor thin films on metals in the halogenation process. Atomic structure of copper iodide on the Cu(110) surface

B. V. Andryushechkin, K. N. El'tsov, V. V. Cherkez

Natural Sciences Center at General Physics Institute of RAS

Abstract: The atomic structure of thin (7–20 Å) copper iodide layers formed on the Cu(110) surface during a chemical reaction with molecular iodine in ultrahigh vacuum has been studied with scanning tunneling microscopy. A double stripe superstructure with an average period of 90–100 Å was found on the surface of CuI. The structural model is proposed for the copper iodide surface taking into account the contraction of the CuI lattice and the formation of striped domain walls.

PACS: 68.35.-p, 68.35.Bs, 68.65.+g