This article is cited in 17 papers

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Picosecond carrier relaxation in type-II ZnSe/BeTe heterostructures

A. A. Maksimov^a, I. I. Tartakovskii^a, D. R. Yakovlev^b, M. Bayer^b, A. Waag<sup>c

a</sup> Institute of Solid State Physics, Russian Academy of Sciences
^b Experimentelle Physik II, University of Dortmund, D-44227 Dortmund, Germany
^c Institute of Semiconductor Technology, Braunschweig Technical University, D-38106 Braunschweig, Germany

Abstract: Relaxation of photoexcited carriers in the course of the formation of spatially separated layers of electrons and holes in type-II ZnSe/BeTe heterostructures has been studied based on a high time resolution investigation of fast luminescence kinetics. The hole escape times τ from the ZnSe layer have been measured in structures with different ZnSe layer thicknesses (τ = 2.5, 7.5, and 23 ps for thicknesses d = 10, 15, and 20 nm, respectively). It is shown that the increase in the time τ can be explained by the fact that the escape rate of photoexcited holes from the lowest above-barrier level in the ZnSe layer into the BeTe layer decreases as the thickness of the ZnSe layer increases.

PACS: 73.21.-b, 78.66.Hf, 78.67.De

Received: 27.12.2005

 English version: Journal of Experimental and Theoretical Physics Letters, 2006, 83:4, 141–145

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