Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov, “Asymmetric <i>c</i>(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2006, Volume 84, Issue 9,Pages <nobr>596

This article is cited in 9 papers

CONDENSED MATTER

Asymmetric c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface

Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov

Institute of Semiconductor Physics of SB RAS

Abstract: The c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface is studied experimentally. It is shown that it is a first-order phase transition. The phase transition is found to exhibit a highly asymmetric hysteresis. The difference between the direct and inverse runs of the hysteresis is explained in terms of the mean field theory of an adsorption-induced phase transition by the substantial contribution of lateral multiparticle interactions in the adsorbate.

PACS: 64.60.-i, 68.35.Bs

Received: 26.09.2006