This article is cited in 7 papers

CONDENSED MATTER

Spin-dependent tunneling conductance in TbCoFe/Pr₆O₁₁/TbCoFe films

N. N. Krupa

Institute of Magnetism, National Academy of Sciences of Ukraine, ul. Vernadskogo 36b, Kiev, 03142, Ukraine

Abstract: The experimental results of the investigation of tunneling magnetoresistance (TMR) in TbCoFe/Pr₆O₁₁/TbCoFe films at temperatures of 80 and 300 K are presented. The resistance of the structure increases by more than a factor of 1.5 at room temperature and by more than a factor of 3 at a temperature of 80 K under the transition from the state with the magnetization of the TbCoFe layers in a certain direction to the state with the magnetization in the opposite directions. The magnitude of TMR increases when the tunneling transition region is irradiated by nitrogen-laser radiation and when the thickness of the barrier layer increases from 10 to 40 nm. A large TMR value is presumably achieved due to the use of the paramagnetic Pr₆O₁₁ barrier layer.

PACS: 73.40.-c, 75.70.Cn

Received: 14.02.2008
Revised: 07.04.2008

 English version: Journal of Experimental and Theoretical Physics Letters, 2008, 87:10, 548–550

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