Z. D. Kvon, E. B. Olshanetskii, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretskii, “Two-dimensional electron-hole system in a HgTe-based quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2008, Volume 87, Issue 9,Pages <nobr>588

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CONDENSED MATTER

Two-dimensional electron-hole system in a HgTe-based quantum well

Z. D. Kvon^ab, E. B. Olshanetskii^b, D. A. Kozlov^b, N. N. Mikhailov^b, S. A. Dvoretskii^b

^a Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia
^b Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russia

Abstract: A two-dimensional electron-hole system consisting of light high-mobility electrons with a density of N _s = (4–7) × 10¹⁰ cm⁻² and a mobility of μ_n = (4–6) × 10⁵ cm²/V s and heavier low-mobility holes with a density of P _s = (0.7–1.6) × 10¹¹ cm⁻² and a mobility of μ_p = (3–7) × 10⁴ cm²/V s has been discovered in a quantum well based on mercury telluride with the (013) surface orientation. The system exhibits a number of specific magnetotransport properties in both the classical magnetotransport (positive magnetoresistance and alternating Hall effect) and the quantum Hall effect regime. These properties are associated with the coexistence of two-dimensional electrons and holes.

PACS: 73.43.Qt, 73.63.Hs

Received: 02.04.2008