Physics

Calculation of stress-strain states in structural elements of power semiconductor modules with soldered contacts

V. A. Martynenko^a, A. A. Khapugin^a, K. N. Nishchev^b, M. I. Novopol'tsev<sup>b

a</sup> Research engineering center of power semi-conducting devices Electrovypryamitel, Saransk
^b Mordovia State University named after N. P. Ogaryov, Saransk

Abstract: The article presents the results of numerical modelling of strain-stress states in the system of silicon-ceramic-metal matrix composite based on a power IGBT module with soldered contacts. The author explores the influence of materials used in the constructional units and the technology of modules assembling on residual voltages in the system. The results can be used by specialists in the field of power electronics when designing and assessing reliability indexes of semi-conductor devices under cycling duty.

Keywords: IGBT-modules, heat-removals, metal matrix composites, Al-SiC, mechanical strain, ANSYS.

UDC: 538.95