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JOURNALS // Izvestiya of Saratov University. Physics // Archive

Izv. Sarat. Univ. Physics, 2015 Volume 15, Issue 2, Pages 18–31 (Mi isuph229)

This article is cited in 2 papers

Physics

Nonequilibrium the microwave plasma of low pressure in scientific researches and development micro and nanoelectronics

R. K. Yafarov

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences

Abstract: Advantages and benefits realization use of nanotechnology of high ionized low-energy microwave plasma of low pressure are described. It presents the fact that one installation on the basis of microwave plasma can replace up 4 to 5 installations with usual high-frequency excitation of the gas discharge.

Keywords: vacuum-plasma process equipment, nanotechnology, low pressure microwave plasma, surface structure of silicon, microwave plasma-chemical etching, quantum-dimensional systems.

UDC: 533.9



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