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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2016 Volume 58, Issue 6, Pages 1182–1192 (Mi ftt9963)

This article is cited in 15 papers

Low dimensional systems

Two-dimensional hexagonal layers of $A_{N}B_{8-N}$ compounds on semiconductors

S. Yu. Davydovab

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Ioffe Institute, St. Petersburg

Abstract: Using the parabolic model of the electronic spectrum of the substrate and the low-energy approximation of the dispersion law for two-dimensional hexagonal compounds $A_{N}B_{8-N}$, the density of states of an epitaxial layer has been investigated as a function of the band gap of the substrate, the band gap of the graphene-like compound in a free-standing state, their mutual arrangement, and the dimensionless “layer–substrate” coupling constant $C$. It has been shown that, when the coupling constant $C$ exceeds critical values, the density of states of the epitaxial layer undergoes qualitative changes. Both flat and buckled epitaxial layers have been considered. Estimates of the charge redistribution due to the transformation of the density of states of the graphene-like compound have been presented.

Received: 17.11.2015
Revised: 02.12.2015


 English version:
Physics of the Solid State, 2016, 58:6, 1222–1233

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© Steklov Math. Inst. of RAS, 2026