This article is cited in 5 papers

Impurity centers

Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state

V. I. Talanin, I. E. Talanin

Zaporizhzhya Institute of Economics and Information Technologies, Zaporizhzhya, Ukraine

Abstract: The formation of silicon–carbon and silicon–oxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation. It has been confirmed that the complex formation begins in the vicinity of the crystallization front. It has been shown that the Vlasov model of a solid state can be used not only for the investigation of hypothetical ideal crystals, but also for the description of the formation of a defect structure of real crystals.

Received: 09.02.2016
Revised: 13.03.2016

 English version: Physics of the Solid State, 2016, 58:10, 2050–2054

Bibliographic databases:

•