This article is cited in 2 papers

Dielectrics

Relaxation of the electric current in Si$_{3}$N$_{4}$: Experiment and numerical simulation

Yu. N. Novikov^a, V. A. Gritsenko<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 $\times$ 10$^{-13}$ cm$^{2}$.

Received: 07.06.2016

DOI: 10.21883/FTT.2017.01.43949.234

 English version: Physics of the Solid State, 2017, 59:1, 47–52

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