This article is cited in 5 papers

Surface physics, thin films

Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

V. V. Antipov^ab, S. A. Kukushkin^acd, A. V. Osipov<sup>ad

a</sup> Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^b State Technological Institute of St. Petersburg (Technical University)
^c Peter the Great St. Petersburg Polytechnic University
^d St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: An epitaxial 1–3-$\mu$m-thick cadmium telluride film has been grown on silicon with a buffer silicon carbide layer using the method of open thermal evaporation and condensation in vacuum for the first time. The optimum substrate temperature was 500$^\circ$C at an evaporator temperature of 580°C, and the growth time was 4 s. In order to provide more qualitative growth of cadmium telluride, a high-quality 100-nm-thick buffer silicon carbide layer was previously synthesized on the silicon surface using the method of topochemical substitution of atoms. The ellipsometric, Raman, X-ray diffraction, and electron-diffraction analyses showed a high structural perfection of the CdTe layer in the absence of a polycrystalline phase.

Received: 11.07.2016

DOI: 10.21883/FTT.2017.02.44067.288

 English version: Physics of the Solid State, 2017, 59:2, 399–402

Bibliographic databases:

•