This article is cited in 2 papers

Semiconductors

Transport and magnetic properties of a Zn$_{0.1}$Cd$_{0.9}$GeAs$_{2}$+10wt.%MnAs composite with magnetic clusters at high pressure

R. K. Arslanov^a, T. R. Arslanov^a, U. Z. Zalibekov^a, I. V. Fedorchenko<sup>b

a</sup> Daghestan Institute of Physics after Amirkhanov, Makhachkala, Dagestan, Russia
^b Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow

Abstract: The temperature ($T$ = 77–420 K) dependences of the electrical resistivity and the magnetization, the magnetic-field ($H\le$ 5 kOe) and pressure ($P\le$ 7 GPa) dependences of the resistivity, the Hall coefficient, and the magnetization have been measured in the Zn$_{0.1}$Cd$_{0.9}$GeAs$_{2}$+10wt.%MnAs composite with the Curie temperature $T_C$ = 310 K. The magnetoresistive effect has been observed at high hydrostatic pressure to 7 GPa. At nearly room temperature, the pressure dependence of the magnetization demonstrated a transition from the ferromagnetic to paramagnetic state at $P\sim$ 3.2 GPa that was accompanied by the semiconductor–metal phase transition.

Received: 10.08.2016

DOI: 10.21883/FTT.2017.03.44155.322

 English version: Physics of the Solid State, 2017, 59:3, 483–486

Bibliographic databases:

•