This article is cited in 3 papers

Semiconductors

Magnetic capacitance of the Gd$_{x}$Bi$_{1-x}$FeO$_{3}$ thin films

S. S. Aplesnin^ab, V. V. Kretinin^a, A. M. Panasevich^c, K. I. Yanushkevich<sup>c

a</sup> M. F. Reshetnev Siberian State Aerospace University, Krasnoyarsk, Russia
^b L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
^c Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus

Abstract: The capacitance, inductance, and dissipation factor of the Gd$_{x}$Bi$_{1-x}$FeO$_{3}$ films were measured in the temperature range of 100 K $<T<$ 800 K in magnetic fields of up to 8 kOe at frequencies of 0.1–100 kHz. The magnetic susceptibility maxima in the low-temperature region and dependences of the relaxation time and inductance on prehistory of the films cooled in zero and nonzero magnetic fields are established. The giant increase in magnetic capacitance in the external bias electric field is found. The results obtained are explained by the domain structure transformation in external electric and magnetic fields.

Received: 14.03.2016
Revised: 27.06.2016

DOI: 10.21883/FTT.2017.04.44265.094

 English version: Physics of the Solid State, 2017, 59:4, 667–673

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