This article is cited in 5 papers

Semiconductors

Dielectric losses and charge transfer in antimony-doped TlGaS$_{2}$ single crystal

S. M. Asadov^a, S. N. Mustafaeva<sup>b

a</sup> Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku
^b Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan

Abstract: Effect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS$_{2}$-based single crystals grown by the Bridgman–Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa$_{0.995}$Sb$_{0.005}$S$_{2}$ single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS$_{2}$ single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.

Received: 19.09.2017
Revised: 25.09.2017

DOI: 10.21883/FTT.2018.03.45551.266

 English version: Physics of the Solid State, 2018, 60:3, 499–503

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