This article is cited in 9 papers

XIV International Conference ''Physics of Dielectrics'', St. Petersburg May 29-June 2, 2017
Surface Physics, Thin Films

Topological insulator state in thin bismuth films subjected to plane tensile strain

E. V. Demidov, V. M. Grabov, V. A. Komarov, N. S. Kablukova, A. N. Krushelnitckii

Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. Carrier densities were calculated. A considerable increase in carrier density in films thinner than 30 nm was observed. This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator.

DOI: 10.21883/FTT.2018.03.45543.07D

 English version: Physics of the Solid State, 2018, 60:3, 457–460

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