This article is cited in 11 papers

International school-seminar ''Excitons in crystals and semiconductor nanostructures'', dedicated to the 120th anniversary of the birth of E. F. Gross, St. Petersburg, October 10-12, 2017
Semiconductors

Exciton recombination and spin dynamics in indirect-gap quantum wells and quantum dots

T. S. Shamirzaev<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg

Abstract: The behavior of excitons in heterostructures with indirect-gap GaAs/AlAs quantum wells and (In, Al)As/AlAs quantum dots is discussed. The possibilities of controlled change of the exciton radiative recombination time in the range from dozens of nanoseconds to dozens of microseconds, experimental study of the spin dynamics of long-lived localized excitons, and use of the optical resonant methods for exciting the indirect-band exciton states are demonstrated.

DOI: 10.21883/FTT.2018.08.46240.08Gr

 English version: Physics of the Solid State, 2018, 60:8, 1554–1567

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