RUS  ENG
Full version
JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2018 Volume 60, Issue 12, Pages 2275–2305 (Mi ftt8964)

This article is cited in 4 papers

Reviews

Mn$_{\operatorname{Ga}}$ acceptor center in GaAs (review)

N. S. Averkiev, A. A. Gutkin

Ioffe Institute, St. Petersburg

Abstract: The model of the Mn$_{\operatorname{Ga}}$ acceptor in GaAs in which initial ground state of a coupled hole $\Gamma_8$ is changed due to the antiferromagnetic exchange interaction with five 3$d$ electrons of the Mn core is described. The acceptor energy spectrum and the wave functions of its states and also their changes under action of deformations, electric and magnetic fields are considered. Expressions are presented for the description of various properties of isolated Mn$_{\operatorname{Ga}}$ acceptors in GaAs, and the data of some experiments (changes in the Mn$_{\operatorname{Ga}}^0$ luminescence and absorption spectra and polarization under uniaxial pressures and in magnetic field, EPR spectra, temperature dependence of the magnetic susceptibility, circular polarization of photoluminescence during excitation by polarized light in magnetic field, etc.) are analyzed. It is demonstrated that, in some cases, it is necessary to take into account the existence of random electric and strain fields splitting the acceptor states in the crystal. The analysis results show that this model agrees well with most of the experimental results. The exchange interaction constant is in the range of 3–5 meV.

Received: 16.04.2018
Revised: 21.05.2018

DOI: 10.21883/FTT.2018.12.46716.106


 English version:
Physics of the Solid State, 2018, 60:12, 2311–2343

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026