This article is cited in 2 papers

XVII International Theophilov Symposium, Yekaterinburg, September 23-28, 2018
Optical properties

Excitons in PL spectra of Cu(In, Ga)Se$_{2}$ single crystal

E. Skidchenko^abc, M. V. Yakushev^def, L. Spasevski^b, P. R. Edwards^b, M. A. Sulimov^de, R. W. Martin<sup>b

a</sup> Skolkovo Institute of Science and Technology, Skolkovo Innovation Centre, Moscow, Russia
^b Department of Physics, SUPA, University of Strathclyde, G4 0NG Glasgow, UK
^c Department of Plasma Technology and Nanotechnology of High Molecular Weight Materials, Kazan National Research Technological University, Kazan, Russia
^d M.N. Mikheev Institute of Metal Physics of the UB RAS, Ekaterinburg, Russia
^e Ural Federal University, Ekaterinburg, Russia
^f Institute of Solid State Chemistry of the UB RAS, Ekaterinburg, Russia

Abstract: A photoluminescence (PL) study of Cu(In, Ga)Se$_{2}$ (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7% and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7% and 12% Ga content are clearly observed, analysed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.

Language: English

DOI: 10.21883/FTT.2019.05.47609.39F

 English version: Physics of the Solid State, 2019, 61:5, 918–924

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