This article is cited in 9 papers

XVII International Theophilov Symposium, Yekaterinburg, September 23-28, 2018
Impurity centers

Origin of the concentration quenching of luminescence in Zn$_{2}$SiO$_{4}$ : Mn phosphors

T. A. Onufrieva^a, T. I. Krasnenko^a, N. A. Zaitseva^ab, I. V. Baklanova^a, M. V. Rotermel'^a, I. V. Ivanova^a, I. D. Popov^a, R. F. Samigullina<sup>a

a</sup> Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg
^b Ural State Mining University

Abstract: The analysis of the unified series of single-phase Zn$_{2-2x}$Mn$_{2x}$SiO$_{4}$ samples ($x\le$ 0.2) has provided the possibility to determine the optimal dopant concentration $x$ = 0.13 for the maximum luminescence intensity. It has been established that the dominating mechanism of concentration luminescence quenching and excitation energy dissipation is the oxidation of some Mn$^{2+}$ activating ions and the growth of defectness in the luminophore due to this process Phosphors.

DOI: 10.21883/FTT.2019.05.47591.27F

 English version: Physics of the Solid State, 2019, 61:5, 806–810

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