This article is cited in 2 papers

Graphenes

Carbon nanostructures on a semiconductor substrate

S. Yu. Davydov

Ioffe Institute, St. Petersburg

Abstract: The analytical expressions for the density of states and the occupation numbers are obtained for simple models of carbon nanostructures (graphene–boron nitride lateral heterostructure, decorated zigzag edges of semi-infinity graphene and graphene nanoribbons, and decorated carbyne). The main attention is placed to the strong-coupling regime of the nanostructures with a semiconducting substrate. The numerical estimations are given for the SiC substrate.

Received: 17.01.2019
Revised: 17.01.2019
Accepted: 31.01.2019

DOI: 10.21883/FTT.2019.06.47701.359

 English version: Physics of the Solid State, 2019, 61:6, 1154–1161

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