This article is cited in 9 papers

Dielectrics

Traps in the nanocomposite layer of silicon-silicon dioxide and their influence on the luminescent properties

P. A. Dementev, E. V. Ivanova, M. V. Zamoryanskaya

Ioffe Institute, St. Petersburg

Abstract: The traps in thermal films of silicon dioxide and silicon dioxide with a nanocomposite layer on the surface were investigated by Kelvin-probe microscopy and cathode luminescence. In the layers, both electron traps and hole traps are observed. The effect of the charge state of electron traps on the luminescent properties of films is demonstrated. It is shown that in the presence of a nanocomposite layer in silicon dioxide films, the number of electron traps increases, but their activation energy remains close to the activation energy of traps in pure silicon dioxide, which suggests that the nature of the traps in such layers is similar.

Keywords: traps of electrons, traps of holes, silicon nanoclusters, the luminescence.

Received: 15.04.2019
Revised: 15.04.2019
Accepted: 16.04.2019

DOI: 10.21883/FTT.2019.08.47968.454

 English version: Physics of the Solid State, 2019, 61:8, 1394–1400

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