This article is cited in 2 papers

Surface physics, thin films

Nanoscale potential fluctuations in SiO$_{x}$ synthesized by the plasma enhanced chemical vapor deposition

T. V. Perevalov^ab, V. A. Volodin^ab, Yu. N. Novikov^b, G. N. Kamaev^a, V. A. Gritsenko^abc, I. P. Prosvirin<sup>d

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c Novosibirsk State Technical University
^d Boreskov Institute of Catalysis SB RAS, Novosibirsk

Abstract: The atomic structure and electron spectrum of $a$-SiO$_{x}$:H films deposited on silicon and glass substrates by the plasma enhanced chemical vapor deposition method are considered in this paper. The film stoichiometric parameter $x$ varied in the range from 0.57 to 2 depending on the oxygen supply to the reactor conditions. The film structures and the electronic structure peculiarities characterization, depending on the parameter $x$ value, were carried out using a set of structural and optical techniques, as well as the ab initio quantum-chemical simulation for the model SiO$_x$ structure. It was established that the studied SiO$_x$:H films mainly consist of silicon suboxide SiO$_y$ with SiO$_2$ and amorphous Si clusters. Based on the spatial chemical composition fluctuations, the electron and hole potential fluctuations model for SiO$_{x}$ is proposed. The obtained results will allow a more accurate charge transport modeling in $a$-SiO$_x$:H films, which is important for creating nonvolatile memory and memristor elements on the base of SiO$_{x}$.

Keywords: silicon oxide (SiO$_2$), Raman scattering, X-ray photoelectron spectroscopy, transmission electron microscopy, plasma enhanced chemical vapor deposition (PECVD), resistive memory.

Received: 03.07.2019
Revised: 03.07.2019
Accepted: 15.07.2019

DOI: 10.21883/FTT.2019.12.48589.552

 English version: Physics of the Solid State, 2019, 61:12, 2560–2568

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