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International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Low-dimensional systems

Aromatic-like carbon nanostructures created on the vicinal SiC surfaces

G. V. Benemanskaya^a, S. A. Kukushkin^bc, S. N. Timoshnev<sup>d

a</sup> Ioffe Institute, St. Petersburg, Russia
^b Institute of Problems of Mechanical Engineering of the Russian Academy of Sciences, Saint Petersburg, Russia
^c St. Petersburg State Politechnical University, Saint Petersburg, Russia
^d Saint-Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia

Abstract: Electronic structure of the ultrathin Cs, Ba/SiC(111)-4$^\circ$, 8$^\circ$ interfaces have been studied in situ in an ultrahigh vacuum using synchrotron-based photoelectron spectroscopy. Change in the C $1s$ and Si $2p$ core level spectra was studied upon the adsorption of Cs or Ba within the submonolayer coverage range. The formation of a new, previously unknown carbon nanostructure was revealed under adsorption of Cs or Ba atoms. Data show that the nanostructure is formed exclusively on SiC vicinal surfaces in the presence of stabilizing adsorbed metal atoms, such as Cs or Ba atoms. It is established that the carbon nanostructure consists of carbon rings, in which chemical bonds are similar in nature to the bonds inherent in aromatic compounds.

Keywords: silicon carbide, vicinal surface, interface, electronic structure, photoelectron spectroscopy.

Received: 16.07.2019
Revised: 16.07.2019
Accepted: 25.07.2019

Language: English

 English version: Physics of the Solid State, 2019, 61:12, 2455–2458

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