This article is cited in 2 papers

International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Semiconductors

Mechanism of diffusion of carbon and silicon monooxides in a cubic silicon carbide crystal

S. A. Kukushkin^a, A. V. Osipov<sup>b

a</sup> Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The basic processes are described occurring in the case of the diffusion of carbon monoxide CO and silicon monoxide SiO through a layer of single-crystal silicon carbide SiC. This problem arises when a single-crystal SiC layer is grown by the method of atom substitution due to the chemical reaction of a crystalline silicon substrate with CO gas. The reaction products are the epitaxial layer of SiC and the gas SiO. It has been shown that CO and SiO molecules decompose in SiC crystals. Oxygen atoms migrate through interstitials in the [110] direction only with an activation energy of 2.6 eV. The migration of Si and C atoms occurs by the vacancy mechanism in the corresponding sublattices with activation energies of 3.6 eV and 3.9 eV, respectively, and also in the [110] direction only.

Keywords: silicon carbide, diffusion, ab initio modelling, epitaxy.

Received: 16.07.2019
Revised: 16.07.2019
Accepted: 25.07.2019

DOI: 10.21883/FTT.2019.12.48594.50ks

 English version: Physics of the Solid State, 2019, 61:12, 2338–2341

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