This article is cited in
4 papers
Dielectrics
Paramagnetic mn antisite defects in nanoceramics of aluminum–magnesium spinel
A. F. Zacepina,
A. N. Kiryakova,
D. R. Bajtimirova,
T. V. D'yachkovab,
A. P. Tyutyunnikb,
Yu. G. Zainulinb a Ural Federal University, Ekaterinburg
b Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg
Abstract:
The effect of structure and size parameters on the formation of intrinsic and impurity paramagnetic centers in nanoceramics of aluminum–magnesium spinel is studied. The studied samples (grain size
$\sim$ 30 nm) are obtained by thermobaric synthesis. Microcrystalline ceramics and MgAl
$_{2}$O
$_{4}$ single crystal are used as the reference samples. Characteristic paramagnetic centers of Mn
$^{2+}$ (hyperfine structure constant (HFS)
$A$ = 82 G) are present in both single crystal and microceramics. In the studied samples of nanoceramics in the initial state, both impurity Mn
$^{2+}$ and intrinsic F
$^+$ centers exist. Unlike the nanoceramics, the centers of F
$^+$ type in the reference sample appear only after the irradiation with accelerated electrons (130 keV). The parameters of Mn
$^{2+}$ centers in nanoceramics significantly differ on that in microceramics and single crystal. EPR signal of Mn
$^{2+}$ centers in nanoceramics is characterized by two anomalous constant HFS (
$A_1$ = 91.21 G,
$A_2$ = 87.83 G) caused by two types of octahedrally coordinated manganese ions
([Mn
$^{2+}$]
$_{\mathrm{Al}^{3+}}$ antisite defects). The features of spectral parameters of manganese centers correlate with a decrease in the cell parameter of MgAl
$_{2}$O
$_{4}$ in the nanostructural state. The observed effects are interpreted based on the assumed scheme of [Mn
$^{2+}$]
$_{\mathrm{Al}^{3+}}$ charge compensation by the aluminum antisite defect and F
$^+$ center.
Keywords:
electron paramagnetic resonance, MgAl$_{2}$O$_{4}$, nanoceramics, microceramics, hyperfine structure, antisite defects. Received: 16.08.2019
Revised: 16.08.2019
Accepted: 03.09.2019
DOI:
10.21883/FTT.2020.01.48744.568