Semiconductors

Investigation of thermoelectric power of CuInGaTe$_2$ single crystals

A. Salem^ab, J. A. Abdulwahed^c, S. A. Hussein^a, A. S. Salwa<sup>ab

a</sup> Solid State Lab., Physics Department, Faculty of Science, South Valley University, Qena, Egypt
^b Faculty of Art And Science, Aljouf University, KSA
^c Physics Department, Umm Al-Qura University College in Qunfudah-Female, KSA

Abstract: Thermoelectric power values of CuInGaTe$_2$ (CIGT) single crystals were estimated without precedent for a wide temperature range. An authorial unique design dependent on Bridgman procedure for crystal growth from the melt has been utilized to prepare our sample. The single crystals show a $p$-type conductivity within the full range of temperature. Experimental examination has been made of the variety of electrical conductivity and thermoelectric power with CIGT single crystals. The holes and electrons effective masses, the mobilities of the electrons and holes, and the diffusion length of the majority and minority carriers were determined at room temperature. The electron and hole diffusion coefficients in CIGT single crystals are $D_{n}$ = 7.938 m$^{2}$/s and $D_{p}$ = 7.365 m$^{2}$/s, respectively. Additionally, the holes and electrons relaxation times were derived from the mobilities. These outcomes give us a complete and clear picture for the main physical parameters essential for the industrial applications.

Keywords: chalcopyrite semiconductors, thermoelectric power, CuInGaTe$_2$ single crystals.

Received: 21.07.2019
Revised: 21.07.2019
Accepted: 21.07.2019

Language: English

 English version: Physics of the Solid State, 2020, 62:1, 116–119

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