This article is cited in 2 papers

Semiconductors

Anisotropic carrier transport in $n$-doped 6$H$-SiC

R. T. Ferracioli^a, C. G. Rodrigues^a, R. Luzzi<sup>b

a</sup> School of Exact Sciences and Computing, Pontifical Catholic University, Goiás, Brazil
^b Condensed Matter Physics Department, Institute of Physics "Gleb Wataghin", Campinas, Brazil

Abstract: In this paper, a study is presented on the charge transport in n-type doped semiconductor 6$H$-SiC (in both transient and steady state) using a Non-Equilibrium Quantum Kinetic Theory derived from the method of Nonequilibrium Statistical Operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the electric field (applied in the orientation perpendicular or parallel to the $c$-axis) of the basic macrovariables: the “electron drift velocity” and the “non-equilibrium temperature”. The “peak points” in time evolution of this macrovariables are derived and analyzed.

Keywords: semiconductors, 6$H$-SiC, charge transport, drift velocity.

Received: 11.07.2019
Revised: 11.07.2019
Accepted: 09.08.2019

Language: English

 English version: Physics of the Solid State, 2020, 62:1, 110–115

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