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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2020 Volume 62, Issue 2, Pages 241–246 (Mi ftt8493)

This article is cited in 2 papers

Magnetism

The influence of the skin effect and active loss on the intensity of EPR lines in semiconductor materials

A. M. Zyuzin, A. A. Karpeev, N. V. Yantsen

Ogarev Mordovia State University, Saransk

Abstract: The influence of the skin effect and active loss in a semiconductor composite with a wide range of the values of the conductivity on the intensity of EPR absorption lines has been studied. An approach that enables one to obtain adequate agreement of the calculated and experimental results has been proposed. The absorption line intensity corresponding to the unit volume is shown can decrease by several times as the sample volume increases in the dependence on the conductivity of a material under study.

Keywords: electron paramagnetic resonance, skin effect, semiconducting substances.

Received: 24.09.2019
Revised: 04.10.2019
Accepted: 08.10.2019

DOI: 10.21883/FTT.2020.02.48875.590


 English version:
Physics of the Solid State, 2020, 62:2, 291–296

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© Steklov Math. Inst. of RAS, 2026