This article is cited in 2 papers

Low dimensional systems

AlN and GaN nanostructures: analytical estimations of the characteristics of the electronic spectrum

S. Yu. Davydov

Ioffe Institute, St. Petersburg

Abstract: Analytical expressions for the band gaps and characteristic velocities and effective masses of carriers are obtained for infinite flat sheets, free and decorated nanoribbons with zigzag edges, and chains of aluminum and gallium nitrides. The values obtained are compared with the characteristics for silicon carbide and carbon nanostructures calculated within the same models. The role of the substrate is also briefly discussed.

Keywords: two-dimensional sheet, nanoribbon, linear chain, band-gap width, electron characteristic velocity, effective mass.

Received: 20.01.2020
Revised: 20.01.2020
Accepted: 21.01.2020

DOI: 10.21883/FTT.2020.06.49357.007

 English version: Physics of the Solid State, 2020, 62:6, 1085–1089

Bibliographic databases:

•