Semiconductors

Current relaxation in TlGa$_{1-x}$Dy$_{x}$Se$_{2}$ ($x$ = 0.01; 0.03) single crystals

S. N. Mustafaeva^a, K. M. Guseinova^a, M. M. Asadov<sup>b

a</sup> Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
^b Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku

Abstract: The low-temperature relaxation processes in TlGa$_{1-x}$Dy$_{x}$Se$_{2}$ ($x$ = 0.01; 0.03) single crystals have been studied experimentally. The physical parameters which characterize the electron processes in Ag–TlGa$_{1-x}$Dy$_{x}$Se$_{2}$–Ag samples have been determined using the estafette transfer mechanism of the charge formed at deep traps due to the carrier injection from a contact: the effective mobility of the charge transferred due to deep centers, the sample contact capacity, the region of accumulation of the charge in the samples, the contact charging constant, and the flight time of charge carriers through the sample.

Keywords: current relaxation, charge transfer mechanism, TlGa$_{1-x}$Dy$_{x}$Se$_{2}$, injection, deep traps, and charge accumulation.

Received: 23.01.2020
Revised: 23.01.2020
Accepted: 28.01.2020

DOI: 10.21883/FTT.2020.07.49466.010

 English version: Physics of the Solid State, 2020, 62:7, 1150–1155

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